• DocumentCode
    3174387
  • Title

    Numerically controlled sacrificial plasma oxidation using array of electrodes for improving thickness uniformity of SOI

  • Author

    Sano, Y. ; Kamisaka, S. ; Yoshinaga, K. ; Mimura, H. ; Matsuyama, S. ; Yamauchi, K.

  • Author_Institution
    Grad. Sch. of Eng., Osaka Univ., Suita, Japan
  • fYear
    2010
  • fDate
    11-14 Oct. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An array of electrodes covering one-sixth of the area of an 8" wafer was developed as a prototype system for NC sacrificial plasma oxidation. It was demonstrated that the system can be used for simultaneous NC processes by the individual control of the plasma-on time of each electrode.
  • Keywords
    electrodes; numerical control; oxidation; plasma applications; silicon-on-insulator; NC processes; NC sacrificial plasma oxidation; SOI; array of electrodes; individual control; numerically controlled sacrificial plasma oxidation; prototype system; thickness uniformity; Arrays; Electrodes; Oxidation; Plasmas; Process control; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2010 IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    1078-621x
  • Print_ISBN
    978-1-4244-9130-8
  • Electronic_ISBN
    1078-621x
  • Type

    conf

  • DOI
    10.1109/SOI.2010.5641395
  • Filename
    5641395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3174387