Process development of GaAs based RF MEMS

Author

suryanarayana, P. ; Naik, A.A. ; Sridhar, C.H. ; Murthy, V.S. ; Kiran, J. Ravi ; Chaturvedi, Sandeep ; Prasad, S.D. ; Rao, A. V S K ; Muralidharan, R. ; Koul, S.K.

Author_Institution

Semiconductor Complex Ltd., Hyderabad

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

699

Lastpage

701

Abstract

GaAs MMIC compatible process for RF MEMS Switch using 7-layered mask set has been developed. Semi- Insulating GaAs is used as substrate. E-beam evaporated 7000 A thick Ti/Pt/Au is used as bottom metal followed by 2.5 mu thick gold plating is used for CPW structure. PECVD nitride is used as field dielectric layer. Sputtered Au metal is used as a beam layer. Different sacrificial layers are tried and Polyimide was found to be good sacrificial layer to realise the air bridge structures. Different sizes of air bridge structures up to 320 microns length and 100 microns width were realised. SEM was extensively used for analyzing beam structure of different dimensions.

Keywords

MMIC; electron beams; gallium compounds; gold; microswitches; scanning electron microscopy; CPW structure; GaAs; GaAs MMIC compatible; PECVD nitride; RF MEMS switch; SEM; Ti-Pt-Au; air bridge structures; size 100 micron; size 320 micron; substrate; Bridge circuits; Coplanar waveguides; Dielectric substrates; Dielectrics and electrical insulation; Gallium arsenide; Gold; MMICs; Polyimides; Radiofrequency microelectromechanical systems; Switches; GaAs MEMS; RF Switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472616

Filename

4472616