Analog image processing circuit with 0.25µm CMOS compatible SOS MESFETs

Author

Kim, S. ; Lepkowski, W. ; Thornton, T.J. ; Bakkaloglu, B.

Author_Institution

Arizona State Univ., Tempe, AZ, USA

fYear

2010

fDate

11-14 Oct. 2010

Firstpage

1

Lastpage

2

Abstract

Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4μs is achieved with the line detector.

Keywords

CMOS digital integrated circuits; Schottky gate field effect transistors; elemental semiconductors; image processing; neural nets; sapphire; silicon; transient response; 3-layer metal digital CMOS technology; CMOS compatible silicon-on-sapphire MESFET; Si-Al₂O₃; TOM3 model; analog image processing circuit; analog neural network; horizontal line detection; size 0.25 mum; time 4 mus; transient response; Arrays; Artificial neural networks; CMOS integrated circuits; CMOS technology; Image processing; MESFETs; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2010 IEEE International

Conference_Location

San Diego, CA

ISSN

1078-621x

Print_ISBN

978-1-4244-9130-8

Electronic_ISBN

1078-621x

Type

conf

DOI

10.1109/SOI.2010.5641396

Filename

5641396