Title :
Analog image processing circuit with 0.25µm CMOS compatible SOS MESFETs
Author :
Kim, S. ; Lepkowski, W. ; Thornton, T.J. ; Bakkaloglu, B.
Author_Institution :
Arizona State Univ., Tempe, AZ, USA
Abstract :
Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4μs is achieved with the line detector.
Keywords :
CMOS digital integrated circuits; Schottky gate field effect transistors; elemental semiconductors; image processing; neural nets; sapphire; silicon; transient response; 3-layer metal digital CMOS technology; CMOS compatible silicon-on-sapphire MESFET; Si-Al2O3; TOM3 model; analog image processing circuit; analog neural network; horizontal line detection; size 0.25 mum; time 4 mus; transient response; Arrays; Artificial neural networks; CMOS integrated circuits; CMOS technology; Image processing; MESFETs; Semiconductor device modeling;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641396
