Title :
A metrology of silicon film thermal conductivity using micro-Raman spectroscopy
Author :
Liu, Xi ; Wu, Xiaoming ; Ren, Tianling
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
We present a steady state technique enhanced with micro-Raman spectroscopy to measure thermal conductivity of SOI silicon device layer. This metrology, comparing to conventional technique based on thermistor, exhibits two improvements: robustness against ambient disturbance, which leads to an error of 28%, and reduction on measurement system error from 20% to 10%.
Keywords :
Raman spectroscopy; elemental semiconductors; semiconductor device measurement; semiconductor thin films; silicon-on-insulator; thermal conductivity; thermistors; SOI silicon device layer; measurement system error reduction; metrology; microRaman spectroscopy; silicon film; steady state technique; thermal conductivity; thermistor; Films; Metrology; Resistance heating; Silicon; Temperature measurement; Thermal conductivity;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641397
