DocumentCode
3174444
Title
A metrology of silicon film thermal conductivity using micro-Raman spectroscopy
Author
Liu, Xi ; Wu, Xiaoming ; Ren, Tianling
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
1
Lastpage
2
Abstract
We present a steady state technique enhanced with micro-Raman spectroscopy to measure thermal conductivity of SOI silicon device layer. This metrology, comparing to conventional technique based on thermistor, exhibits two improvements: robustness against ambient disturbance, which leads to an error of 28%, and reduction on measurement system error from 20% to 10%.
Keywords
Raman spectroscopy; elemental semiconductors; semiconductor device measurement; semiconductor thin films; silicon-on-insulator; thermal conductivity; thermistors; SOI silicon device layer; measurement system error reduction; metrology; microRaman spectroscopy; silicon film; steady state technique; thermal conductivity; thermistor; Films; Metrology; Resistance heating; Silicon; Temperature measurement; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2010 IEEE International
Conference_Location
San Diego, CA
ISSN
1078-621x
Print_ISBN
978-1-4244-9130-8
Electronic_ISBN
1078-621x
Type
conf
DOI
10.1109/SOI.2010.5641397
Filename
5641397
Link To Document