DocumentCode :
3174454
Title :
Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance
Author :
Van Den Daele, W. ; Le Royer, C. ; Augendre, E. ; Ghibaudo, G. ; Cristoloveanu, S.
Author_Institution :
IMEP-LAHC, Minatec Grenoble-INP, Grenoble, France
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
1
Lastpage :
2
Abstract :
Hole mobility in fully-depleted GeOI pMOSFETs is determined and analyzed using for the first time the geometric magnetoresistance technique. The temperature dependent measurements clarify the scattering mechanisms. A significant difference between effective mobility and magnetoresistance mobility is found. Unlike the SOI nMOSFET, this ratio (rMR ≃ 1.8) is rather independent on the temperature and inversion charge pointing out special scattering mechanisms.
Keywords :
MOSFET; germanium; hole mobility; magnetoresistance; silicon-on-insulator; Ge; SOI nMOSFET; fully-depleted GeOI pMOSFET; geometric magnetoresistance; hole mobility; magnetoresistance mobility; scattering mechanism; temperature dependent measurement; Logic gates; MOSFET circuits; Magnetoresistance; Scattering; Silicon; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
ISSN :
1078-621x
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
Type :
conf
DOI :
10.1109/SOI.2010.5641398
Filename :
5641398
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3174454
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