Title :
Integrated radiation image sensors with SOI technology
Author :
Arai, Yasuo ; Miyoshi, Toshinobu ; Ichimiya, Ryo ; Hara, Kazuhiko ; Onuki, Yoshiyuki
Author_Institution :
Inst. of Particle & Nucl. Studies, KEK, Tsukuba, Japan
Abstract :
We have developed monolithic radiation detectors based on a 0.2 μm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technology. It has both a thick, high-resistivity sensor layer and a thin LSI circuit layer in a single chip. To shield the electronics part from the sensor region, we have created a buried well region under the buried oxide (BOX) layer of the SOI wafer. Two type of detectors, integration and counting types, are being developed.
Keywords :
CMOS integrated circuits; image sensors; silicon-on-insulator; LSI circuit layer; SOI technology; buried oxide layer; buried well region; fully-depleted silicon-on-insulator CMOS technology; high-resistivity sensor layer; integrated radiation image sensors; monolithic radiation detectors; CMOS integrated circuits; Detectors; Logic gates; Pixel; Silicon; Silicon on insulator technology; Transistors;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641403
