Title :
Quality factor enhancement of CMOS inductor with pyramidal winding of metal turns
Author :
Haobijam, Genemala ; Paily, Roy
Author_Institution :
Indian Inst. of Technol. Guwahati, Guwahati
Abstract :
In order to exploit the available multilevel interconnects and to reduce the parasitic capacitances, the metal can be traced spirally up and/or down in a pyramidal manner. This paper presents two methods to improve the quality factor (Q) of pyramidically wound inductors. The first method utilizes bulk micromachining to improve the Q. Quality factor improvement of 14.7% and 19.5% and self resonating frequency improvement of 26.5% and 30.6% respectively were observed in 10 nH and 20 nH over conventional micromachined planar inductors. The second method to improve Q is by differential excitation and is illustrated for 8 nH and 23 nH symmetric pyramidal inductors. The performance of the pyramidically wound inductors are characterized using a full wave Electromagnetic simulator for a six metal layer 0.18 mum process.
Keywords :
CMOS integrated circuits; Q-factor; inductors; micromachining; CMOS inductor; bulk micromachining; differential excitation; multilevel interconnects; pyramidal winding; quality factor enhancement; self resonating frequency improvement; size 0.18 mum; Etching; Inductors; Micromachining; Parasitic capacitance; Q factor; Radiofrequency integrated circuits; Resonant frequency; Silicon; Spirals; Wounds; CMOS inductor; Integrated inductor; Q factor; differential excitation; micromachining;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472624
