A novel polysilicon based process for three terminal surface micromachined cantilever

Author

Katreddi, Uday Bhaskar ; Babu, U. Venu ; Bhattacharya, Enakshi

Author_Institution

Indian Inst. of Technol. Madras, Chennai

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

733

Lastpage

736

Abstract

A three terminal cantilever beam can be used as a switch and also for material and process characterization. This paper deals with process optimization for its fabrication with surface micromachining steps compatible with standard integrated circuit manufacturing technology. The problems encountered in each step of fabrication and possible solutions are discussed in detail. The process makes extensive use of polysilicon deposited by Low Pressure Chemical Vapour Deposition for contacts, sacrificial oxide as well as the structural layer.

Keywords

cantilevers; chemical vapour deposition; elemental semiconductors; micromachining; micromechanical devices; silicon; integrated circuit manufacturing technology; low-pressure chemical vapour deposition; polysilicon contacts; polysilicon deposition; polysilicon structural layer; sacrificial oxide; surface micromachining; three-terminal cantilever beam fabrication; Chemical vapor deposition; Contacts; Fabrication; Force measurement; Micromachining; Micromechanical devices; Silicon; Structural beams; Switches; Voltage; Cantilever; Poly Oxide; Stiction; Surface micromachining;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472625

Filename

4472625