Title :
A novel polysilicon based process for three terminal surface micromachined cantilever
Author :
Katreddi, Uday Bhaskar ; Babu, U. Venu ; Bhattacharya, Enakshi
Author_Institution :
Indian Inst. of Technol. Madras, Chennai
Abstract :
A three terminal cantilever beam can be used as a switch and also for material and process characterization. This paper deals with process optimization for its fabrication with surface micromachining steps compatible with standard integrated circuit manufacturing technology. The problems encountered in each step of fabrication and possible solutions are discussed in detail. The process makes extensive use of polysilicon deposited by Low Pressure Chemical Vapour Deposition for contacts, sacrificial oxide as well as the structural layer.
Keywords :
cantilevers; chemical vapour deposition; elemental semiconductors; micromachining; micromechanical devices; silicon; integrated circuit manufacturing technology; low-pressure chemical vapour deposition; polysilicon contacts; polysilicon deposition; polysilicon structural layer; sacrificial oxide; surface micromachining; three-terminal cantilever beam fabrication; Chemical vapor deposition; Contacts; Fabrication; Force measurement; Micromachining; Micromechanical devices; Silicon; Structural beams; Switches; Voltage; Cantilever; Poly Oxide; Stiction; Surface micromachining;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472625
