Title :
Design of a commutation cell of a high power IGBT inverter-the contribution of the simulation
Author :
Clavel, E. ; Roudet, J. ; Maréchal, Y.
Author_Institution :
Lab. d´´Electrotechnique, CNRS, Grenoble, France
Abstract :
The use of fast semiconductors components in high power inverters implies relatively severe constraints for cabling. Indeed, the turn-off of switches (here IGBT) generates a di/dt of some 2000 A/μs which can create, via parasitic inductances of the commutation cell, prohibitive overvoltages which can became destructive. This paper shows a representative industrial example from which it is now possible to precisely evaluate this parasitic inductance directly from geometrical parameters of connections. The cabling which is used in this industrial application is made using busbar technology according to the power range. The very good agreement between experimental and simulation results shows that it is realistic to widely use modelling to design connections in power electronics
Keywords :
DC-AC power convertors; bipolar transistor switches; commutation; insulated gate bipolar transistors; invertors; power bipolar transistors; power semiconductor switches; semiconductor device models; switching circuits; IGBT inverter; busbar technology; cabling; commutation cell design; fast semiconductors; overvoltages; parasitic inductances; power electronics connections; simulation studies; Bars; Conductors; Electronics cooling; Inductance; Insulated gate bipolar transistors; Inverters; Power electronics; Shape; Solid modeling; Surges;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.628985
