Title :
Carrier lifetime control in power semiconductor devices
Author_Institution :
Czech Tech. Univ. in Prague, Prague
Abstract :
This paper surveys the present technology of carrier lifetime control in power semiconductor devices by controlling recombination centre types and concentration. The correlation of lifetime with device properties such as on-state voltage drop, off-state leakage current and switching times of bipolar devices has been elucidated. Various techniques for preserving or reducing lifetime during semiconductor device fabrication are presented. Advantages, problems and some limits of individual techniques are discussed.
Keywords :
power semiconductor devices; semiconductor device reliability; carrier lifetime control; power semiconductor devices; semiconductor device fabrication; Charge carrier lifetime; Charge carrier processes; Current density; Energy states; Power semiconductor devices; Power semiconductor switches; Radiative recombination; Semiconductor devices; Spontaneous emission; Voltage; Charge carrier lifetime; power semiconductor devices; semiconductor device fabrication;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472629
