Role of encapsulation formulation on charge transport phenomena and HV device instability

Author

Imperiale, Ilaria ; Reggiani, Susanna ; Gnani, Elena ; Gnudi, Antonio ; Baccarani, Giorgio ; Luu Nguyen ; Hernandez-Luna, Alex ; Huckabee, James ; Denison, Marie ; Varghese, Dhanoop

Author_Institution

DEI, Univ. of Bologna, Bologna, Italy

fYear

2015

fDate

26-29 May 2015

Firstpage

159

Lastpage

167

Abstract

Four molding-compound composites with different silica micro-filler size and concentration have been measured on top of dedicated IC test structures. The leakage current of charge sensors has been monitored under different high-voltage stress during charging/discharging transients occurring in the mold. Physical insight of space charge distribution at high electric field and temperature has been obtained by TCAD analysis. The role played by the encapsulation composition on the device-package interaction has been investigated via TCAD simulations of the HTRB test of a Single-RESURF LDMOS.

Keywords

encapsulation; integrated circuit packaging; integrated circuit testing; leakage currents; moulding; silicon compounds; space charge; HTRB test; HV device instability; SiO₂; TCAD analysis; charge sensors; charge transport phenomena; charging-discharging transients; device-package interaction; electric field; encapsulation formulation; high-voltage stress; integrated circuit test structures; leakage current; molding-compound composites; silica microfiller concentration; silica microfiller size; single-RESURF LDMOS; space charge distribution; Compounds; Current measurement; Delays; Encapsulation; Sensors; Stress; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/ECTC.2015.7159586

Filename

7159586