HiSIM-SOI: Complete surface-potential-based model valid for all SOI-structure types

The compact SOI-MOSFET model HiSIM-SOI based on the complete surface-potential description is presented. The model considers all possible charges induced in the device for the formulation of the Poisson equation, which is solved iteratively. Thus HiSIM-SOI is valid for any structural variations from thick to extremely thin SOI or BOX layers. The dynamic depletion between the fully and partially depleted conditions is well reproduced. It is also demonstrated that the floating-body effect can be accurately captured by considering the accumulated charge in the SOI layer for the solution of the Poisson equation. HiSIM-SOI is verified to correctly reproduce 2D-device simulation results automatically for different SOI-structure types without any additional option setting.