Title :
Trench gate IGBTs for zero current switching applications
Author :
de Silva, D.I.M. ; Shrestha, N.K. ; Azar, R. ; Amaratunga, G.A.J. ; Udrea, F. ; Palmer, P.R. ; Chamund, D. ; Coulbeck, L. ; Waind, P.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
This paper reports on the behaviour of trench IGBTs in comparison with equivalent DMOS IGBTs in zero current switching converters. Extensive experimental results backed up by accurate Spice modelling are presented. These results indicate the superior performance of Trench IGBTs particularly at high switching frequencies, currents and junction temperatures in resonant applications.
Keywords :
SPICE; insulated gate bipolar transistors; isolation technology; power semiconductor switches; resonant invertors; switching convertors; DMOS IGBT; Spice modelling; ZCS; current temperatures; junction temperatures; switching frequencies; trench gate IGBT; zero current switching; Circuit testing; Inductors; Insulated gate bipolar transistors; Magnetic resonance; RLC circuits; Resonant inverters; Switches; Switching frequency; Zero current switching; Zero voltage switching;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-7768-0
DOI :
10.1109/APEC.2003.1179328
