Title :
State-of-the-art low voltage and high voltage IGBTs in soft switching operation
Author :
Teichmann, R. ; Bernet, S. ; Luscher, M.
Author_Institution :
Eng. & Consulting, TEICON Co., Dresden, Germany
Abstract :
This paper presents switching and short circuit behavior of state-of-the-art low and high voltage IGBTs in soft switching operation. PT and NPT trench-gate IGBTs are compared with standard and optimized fast IGBTs in zero voltage and zero current switching operation. The soft switching characteristics of 1.2 kV, 3.3 kV, and 4.5 kV IGBTs are presented. A test set-up that constitutes an auxiliary resonant commutated pole switching cell is used to characterize the devices.
Keywords :
commutation; insulated gate bipolar transistors; isolation technology; power semiconductor devices; switching; 1.2 kV; 3.3 kV; 4.5 kV; IGBT; NPT; PT; pole switching cell; resonant commutated; short circuit behavior; soft switching operation; switching behavior; test set-up; trench-gate IGBT; zero current switching operation; zero voltage operation; Insulated gate bipolar transistors; Low voltage; Power semiconductor switches; Resonance; Semiconductor diodes; Switching circuits; Switching converters; Testing; Zero current switching; Zero voltage switching;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-7768-0
DOI :
10.1109/APEC.2003.1179329
