State-of-the-art low voltage and high voltage IGBTs in soft switching operation

Author

Teichmann, R. ; Bernet, S. ; Luscher, M.

Author_Institution

Eng. & Consulting, TEICON Co., Dresden, Germany

Volume

2

fYear

2003

fDate

9-13 Feb. 2003

Firstpage

938

Abstract

This paper presents switching and short circuit behavior of state-of-the-art low and high voltage IGBTs in soft switching operation. PT and NPT trench-gate IGBTs are compared with standard and optimized fast IGBTs in zero voltage and zero current switching operation. The soft switching characteristics of 1.2 kV, 3.3 kV, and 4.5 kV IGBTs are presented. A test set-up that constitutes an auxiliary resonant commutated pole switching cell is used to characterize the devices.

Keywords

commutation; insulated gate bipolar transistors; isolation technology; power semiconductor devices; switching; 1.2 kV; 3.3 kV; 4.5 kV; IGBT; NPT; PT; pole switching cell; resonant commutated; short circuit behavior; soft switching operation; switching behavior; test set-up; trench-gate IGBT; zero current switching operation; zero voltage operation; Insulated gate bipolar transistors; Low voltage; Power semiconductor switches; Resonance; Semiconductor diodes; Switching circuits; Switching converters; Testing; Zero current switching; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-7768-0

Type

conf

DOI

10.1109/APEC.2003.1179329

Filename

1179329