Title :
An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer
Author :
Lee, Jong-Seok ; Shin, Ho-Hyun ; Lee, Han-Sin ; Kang, Ey-Goo ; Sung, Man Young
Author_Institution :
Korea Univ., Seoul
Abstract :
A trench gate insulated gate bipolar transistor(IGBT) employing a shielding layer, which improves the breakdown voltage characteristic is proposed and verified by 2D numerical simulation. The shielding layer concept is proposed to alleviate the electric field of concentrated on the trench bottom corner. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.
Keywords :
insulated gate bipolar transistors; semiconductor device breakdown; breakdown voltage characteristics; gate oxide; shielding layer concept; trench gate IGBT; trench gate insulated gate bipolar transistor; Breakdown voltage; Circuits; Electric resistance; Etching; Implants; Insulated gate bipolar transistors; Insulation; Inverters; Ion implantation; Low voltage; Breakdown voltage; Electric field; Insulated gate bipolar transistor; Shielding layer; Trench gate;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472639
