Title :
Parameter extraction for a physics-based circuit simulator IGBT model
Author :
Kang, X. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R. ; Donlon, J.F.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the parameter extraction method.
Keywords :
Fourier transforms; insulated gate bipolar transistors; parameter estimation; power semiconductor devices; semiconductor device models; Fourier-based-solution; IGBT model; NPT IGBT models; PT IGBT models; clamped inductive load test; parameter extraction; physics-based IGBT model; power semiconductor modeling; robustness; Analytical models; Bipolar transistors; Character generation; Circuit simulation; Insulated gate bipolar transistors; Low voltage; Parameter extraction; Power engineering and energy; Robustness; Testing;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-7768-0
DOI :
10.1109/APEC.2003.1179330
