Different approaches for the n-type doping of diamond

Author

Chevallier, J. ; Pinault, M.-A. ; Barjon, J. ; Kociniewski, T. ; Jomard, F. ; Saguy, C. ; Kalish, R.

Author_Institution

C.N.R.S. & Univ. of Versailles, Meudon

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

813

Lastpage

818

Abstract

Several obstacles remain to be overcome before the use of diamond as a semiconductor for high power, high temperature and high frequency devices. The n-type doping of diamond is one of them. In this work, we present two different approaches of this issue. The first one is phosphorus incorporation. However, because this donor is relatively deep (0.6 eV), the 300 K electrical conductivity is in the range 10^-4-10^-3 S/cm. The second one is based on the conversion of p-type boron-doped diamond into n-type diamond under deuteration giving conductivities up to 2 S/cm at 300 K. A comparison of these approaches is discussed.

Keywords

boron; diamond; electrical conductivity; hydrogenation; phosphorus; semiconductor doping; deuteration; electrical conductivity; high frequency device; high power device; high temperature device; n-type doping; p-type boron-doped diamond; phosphorus incorporation; Chemical elements; Conductivity; Diamond-like carbon; Doping; Hydrogen; Impurities; Ionization; Nitrogen; Surface reconstruction; Temperature; Diamond; diffusion; dopant; electrical conductivity; excitons; hydrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472642

Filename

4472642