Different approaches for the n-type doping of diamond

Several obstacles remain to be overcome before the use of diamond as a semiconductor for high power, high temperature and high frequency devices. The n-type doping of diamond is one of them. In this work, we present two different approaches of this issue. The first one is phosphorus incorporation. However, because this donor is relatively deep (0.6 eV), the 300 K electrical conductivity is in the range 10^-4-10^-3 S/cm. The second one is based on the conversion of p-type boron-doped diamond into n-type diamond under deuteration giving conductivities up to 2 S/cm at 300 K. A comparison of these approaches is discussed.