DocumentCode
3174996
Title
The impact of high-κ gate dielectrics on carbon nanotube transistors
Author
Orouji, Ali A. ; Arefinia, Zahra
Author_Institution
Semnan Univ., Semnan
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
831
Lastpage
833
Abstract
The potential impact of high-kappa gate dielectrics on carbon nanotube field effect transistors (CNTFETs) is studied over a wide range of dielectric permittivities using a two-dimensional model. It is found that the high-kappa CNTFETs afford high ON currents and high voltage gain. Likewise average electron velocity at the top of the barrier increases. Key transistor performance parameters, transconductance and output conductance improve for high-K CNTFETs.
Keywords
carbon nanotubes; field effect transistors; high-k dielectric thin films; nanotube devices; permittivity; average electron velocity; carbon nanotube field effect transistors; dielectric permittivity; high-k gate dielectrics; high-kappa gate dielectrics; output conductance; transconductance; CNTFETs; Carbon nanotubes; Dielectric constant; Dielectric devices; Dielectrics and electrical insulation; Electrons; Permittivity; Transconductance; Two dimensional displays; Voltage; carbon nanotube; field effect transistor; high-κ; two-dimensional (2-D) model;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472648
Filename
4472648
Link To Document