Field emission from carbon nanotubes: a comparative study between the carbon nanotubes synthesized by thermal and microwave plasma chemical vapor deposition

Author

Rai, Padmnabh ; Mohapatra, Dipti Ranjan ; Misra, Abha ; Misra, D.S.

Author_Institution

Indian Inst. of Technol. Mumbai, Mumbai

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

834

Lastpage

835

Abstract

The carbon nanotubes (CNTs) samples are grown using the microwave plasma chemical vapor deposition (MPCVD) and thermal chemical vapor deposition (THCVD) technique on Fe catalyst deposited by thermal evaporation on silicon substrate. The field emission measurements of the samples have been made in a diode assembly at room temperature in a vacuum chamber with a base pressure of 10^-7 mbar. The turn-on fields of CNT films grown by THCVD and MPCVD techniques are 0.6 and 1.0 V/mum, respectively.

Keywords

carbon nanotubes; field emission; iron; nanotechnology; plasma CVD; silicon; vacuum deposition; C; Fe; Si; carbon nanotubes; diode assembly; field emission; microwave plasma chemical vapor deposition; silicon substrate; temperature 293 K to 298 K; thermal chemical vapor deposition; thermal evaporation; vacuum chamber; Carbon nanotubes; Chemical vapor deposition; Diodes; Iron; Microwave theory and techniques; Plasma chemistry; Plasma measurements; Plasma temperature; Pressure measurement; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472649

Filename

4472649