DocumentCode :
3175013
Title :
Field emission from carbon nanotubes: a comparative study between the carbon nanotubes synthesized by thermal and microwave plasma chemical vapor deposition
Author :
Rai, Padmnabh ; Mohapatra, Dipti Ranjan ; Misra, Abha ; Misra, D.S.
Author_Institution :
Indian Inst. of Technol. Mumbai, Mumbai
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
834
Lastpage :
835
Abstract :
The carbon nanotubes (CNTs) samples are grown using the microwave plasma chemical vapor deposition (MPCVD) and thermal chemical vapor deposition (THCVD) technique on Fe catalyst deposited by thermal evaporation on silicon substrate. The field emission measurements of the samples have been made in a diode assembly at room temperature in a vacuum chamber with a base pressure of 10-7 mbar. The turn-on fields of CNT films grown by THCVD and MPCVD techniques are 0.6 and 1.0 V/mum, respectively.
Keywords :
carbon nanotubes; field emission; iron; nanotechnology; plasma CVD; silicon; vacuum deposition; C; Fe; Si; carbon nanotubes; diode assembly; field emission; microwave plasma chemical vapor deposition; silicon substrate; temperature 293 K to 298 K; thermal chemical vapor deposition; thermal evaporation; vacuum chamber; Carbon nanotubes; Chemical vapor deposition; Diodes; Iron; Microwave theory and techniques; Plasma chemistry; Plasma measurements; Plasma temperature; Pressure measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472649
Filename :
4472649
Link To Document :
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