DocumentCode :
3175114
Title :
Template assisted growth of aligned CdSe nanowires by DC electrochemical process
Author :
Mondal, S.P. ; Das, K. ; Dhar, A. ; Ray, S.K.
Author_Institution :
Indian Inst. of Technol. Kharagpur, Kharagpur
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
855
Lastpage :
858
Abstract :
CdSe nanowires were prepared by a simple DC electrochemical process using porous anodic alumina templates. FESEM micrographs demonstrated the growth of CdSe nanowires of diameter 200-300 nm by filling up the nano-pores in alumina. X-ray diffraction patterns revealed the growth of CdSe with hexagonal phase. The absorption spectrum showed a band gap value nearer to bulk CdSe. Room temperature photoluminescence measurement showed the defect related emission from the nanowires.
Keywords :
II-VI semiconductors; cadmium compounds; nanowires; photoluminescence; scanning electron microscopy; sputter deposition; CdSe; DC electrochemical process; X-ray diffraction patterns; absorption spectrum; band gap value; hexagonal phase; nanopores; nanowires; photoluminescence measurement; porous anodic alumina templates; template assisted growth; Biomedical optical imaging; Cathodes; Electrochemical processes; Electromagnetic wave absorption; Nanobioscience; Nanowires; Optical sensors; Photoluminescence; Temperature measurement; X-ray diffraction; CdSe; Electrodeposition; Photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472655
Filename :
4472655
Link To Document :
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