Title :
Effect of annealing on photoluminescence property of nano particle composite ZnO films
Author :
Mandal, S. ; Mallik, H. ; Dhar, A. ; Ray, S.K.
Author_Institution :
Indian Inst. of Technol. Kharagpur, Kharagpur
Abstract :
The effect of annealing temperature on the structural as well as photoluminescence (PL) properties of the nanocrystalline ZnO films deposited by sol-gel process has been investigated. The as-deposited film is amorphous in nature, and the crystallinity as well as grain sizes have been found to increase on post-deposition annealing. PL intensity is greatly improved with the increase in annealing temperature, and the band gap of ZnO films is red-shifted. A correlation between the structural and optical properties has been investigated in detail.
Keywords :
II-VI semiconductors; annealing; energy gap; nanocomposites; nanoparticles; photoluminescence; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; annealing; band gap; nanocrystalline; nanoparticle composite; photoluminescence; sol-gel process; Annealing; Crystalline materials; Crystallization; Grain size; Optical films; Photoluminescence; Photonic band gap; Semiconductor films; Temperature; Zinc oxide; II-VI semiconductor; Photoluminescence; Thin films;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472656
