Effect of annealing on photoluminescence property of nano particle composite ZnO films

Author

Mandal, S. ; Mallik, H. ; Dhar, A. ; Ray, S.K.

Author_Institution

Indian Inst. of Technol. Kharagpur, Kharagpur

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

859

Lastpage

862

Abstract

The effect of annealing temperature on the structural as well as photoluminescence (PL) properties of the nanocrystalline ZnO films deposited by sol-gel process has been investigated. The as-deposited film is amorphous in nature, and the crystallinity as well as grain sizes have been found to increase on post-deposition annealing. PL intensity is greatly improved with the increase in annealing temperature, and the band gap of ZnO films is red-shifted. A correlation between the structural and optical properties has been investigated in detail.

Keywords

II-VI semiconductors; annealing; energy gap; nanocomposites; nanoparticles; photoluminescence; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; annealing; band gap; nanocrystalline; nanoparticle composite; photoluminescence; sol-gel process; Annealing; Crystalline materials; Crystallization; Grain size; Optical films; Photoluminescence; Photonic band gap; Semiconductor films; Temperature; Zinc oxide; II-VI semiconductor; Photoluminescence; Thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472656

Filename

4472656