DocumentCode :
3175188
Title :
Dielectric and structural properties of iron doped titanate nano-composites
Author :
Singh, Davinder ; Sharma, S.D. ; Saini, K.K. ; Kant, Chander ; Singh, Nafa ; Jain, S.C. ; Sharma, Sunil Dutta
Author_Institution :
Nat. Phys. Lab., New Delhi
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
870
Lastpage :
871
Abstract :
TiO2 has been used for gas sensing devices (Mohammadi et al., 2007) photo catalytic devices (Litter and Navio, 1996) and photoelectric devices (Levy, 1997). Recently the dielectric properties of TiO2 have been of great interest for applications in the telecommunications industry due to its unusual high dielectric constant and low dielectric loss. The use of layers of high dielectric constant materials in small scale metal insulator semiconductor devices has been considered in numerous recent publications these materials unable to maintain the same capacitance density as SiO2 films but provide a smaller leakage current density. Examples of such materials include tantalum and yttrium oxides (Moon et al., 1999) and titanium dioxide which has the largest dielectric constant value varying in the range of 25-100 (Tang et al, 1997).
Keywords :
iron; leakage currents; metal-insulator boundaries; nanocomposites; permittivity; titanium compounds; TiO2:Fe; dielectric constant materials; dielectric properties; leakage current density; nanocomposites; small scale metal insulator semiconductor devices; structural properties; Communication industry; Dielectric constant; Dielectric losses; Dielectric materials; High-K gate dielectrics; Inorganic materials; Iron; Metal-insulator structures; Semiconductor materials; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1727-8
Type :
conf
DOI :
10.1109/IWPSD.2007.4472659
Filename :
4472659
Link To Document :
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