Title :
Study of direct tunneling current in carbon nanotube based floating gate devices
Author :
Chakraborty, G. ; Sarkar, C.K.
Author_Institution :
Jadavpur Univ., Kolkata
Abstract :
In this study a metal oxide semiconductor (MOS) structure has been proposed using single walled semiconducting carbon nanotube (SWCNT) as floating gate and high-k dielectric Hafnium Aluminate (HfAlO) as tunnel and control oxide. This composite gate dielectric shows a low gate leakage current which is generally a direct tunneling current. To evaluate this direct tunneling current two important parameters such as barrier height and effective mass have been modified. This MOS transistor used as nonvolatile memory or flash memory in present VLSI technology.
Keywords :
MOSFET; carbon nanotubes; hafnium compounds; high-k dielectric thin films; leakage currents; nanotube devices; semiconductor nanotubes; HfAlO; MOS transistor; VLSI technology; composite gate dielectric; direct tunneling current; flash memory; floating gate devices; high-k dielectric material; leakage current; metal oxide semiconductor; nonvolatile memory; single walled semiconducting carbon nanotube; Carbon nanotubes; Effective mass; Flash memory; Hafnium; High-K gate dielectrics; Leakage current; MOSFETs; Nonvolatile memory; Semiconductivity; Tunneling; Direct tunneling; Floating gate; Hafnium Aluminate; High dielectric constant (High-κ);
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472660
