Title :
Necessity for quantum mechanical simulation for the future technology nodes
Author :
Ray, Biswajit ; Subhakar, K. ; Mahapatra, Santanu
Author_Institution :
Indian Inst. of Sci., Bangalore
Abstract :
In this paper we present and compare the results obtained from semi-classical and quantum mechanical simulation for a double gate MOSFET structure to analyze the electrostatics and carrier dynamics of this device. The geometries like gate length, body thickness of this device have been chosen according to the ITRS specification for the different technology nodes. We have shown the extent of deviation between the semi- classical and quantum mechanical results and hence the need of quantum simulations for the promising nanoscale devices in the future technology nodes predicted in ITRS.
Keywords :
MOSFET; electrostatics; nanotechnology; quantum theory; ITRS specification; carrier dynamics; double gate MOSFET structure; electrostatics; nanoscale devices; quantum mechanical simulation; Analytical models; Boltzmann equation; Electrons; Electrostatics; Green´s function methods; MOSFET circuits; Nanoscale devices; Poisson equations; Quantum mechanics; Semiconductor device doping; Boltzmann’s Transport Equation; Double Gate MOSFET; International Technology Roadmap for Semiconductor (ITRS); Non Equilibrium Green’s Function Method;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472662
