Effects of shape, dimension and interdiffusion on the photoluminescence of III-V semiconductor quantum dots

Author

Kumar, Subindu ; Kabi, Sanjib ; Biswas, Dipankar

Author_Institution

Siliguri Inst. of Technol., Darjeeling

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

894

Lastpage

896

Abstract

Interdiffusion in In_xGa_1-x As/GaAs QDs may occur during growth and subsequent device processing steps. As monitored through photoluminescence (PL), the experimental results on the annealing of In_xGa_1-x As/GaAs QDs depicts one particular phenomenon, that is, the initially observed PL spectrum is very broad. After annealing, the PL peak undergoes a blueshift and the full width at half maximum (FWHM) decreases, while there is an increase in the intensity. In this paper we have investigated the effects of interdiffusion in QDs with various shapes of theoretical and practical interest like pyramidal, truncated pyramidal and lens shaped through quantum mechanical computations.

Keywords

III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; III-V semiconductor quantum dots; InGaAs-GaAs; annealing; blueshift; interdiffusion; lens shaped QD; photoluminescence; pyramidal QD; quantum mechanical computation; semiconductor growth; truncated pyramidal QD; Annealing; Gallium arsenide; III-V semiconductor materials; Lenses; Monitoring; Photoluminescence; Quantum computing; Quantum dots; Quantum mechanics; Shape; Annealing; Photoluminescence; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472666

Filename

4472666