DocumentCode :
3175333
Title :
Advanced seed layer of Cu wiring for printed circuit board with sputtering method
Author :
Fujinaga, Tetsushi
Author_Institution :
ULVAC, Inc., Chigasaki, Japan
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
362
Lastpage :
366
Abstract :
To realize fine pitch and high density Cu wiring pattering on printed circuit board, seed layer sputtering method with high productivity is necessary. ULVAC developed new sputtering system for seed layer of fine pitch and high density Cu wiring [1]. Thin thickness seed layer controllability is important in terms of prevention over etching and deterioration of Cu wiring shape at seed layer etching step to achieve below 5um/5um line and space pattern. And throwing power improvement with thin seed layer thickness is also important to fill Via with Cu electro plating. ULVAC developed directional sputtering method to improve throwing power and then we could suppress surface seed layer thickness. On the other hand, ULVAC has developed Cu alloy material and deposition process with high adhesion and barrier characteristics as Cu wiring technique for flat panel display [2][3]. We arranged this Cu alloy material composition for Cu wiring seed layer of printed circuit board and developed advanced Cu alloy material. With this advanced Cu alloy material, manufacturing process step can be reduced. By applying these new techniques, we can provide advanced seed layer of Cu wiring for printed circuit board.
Keywords :
adhesion; copper; copper alloys; electroplating; printed circuits; sputter etching; vias; Cu; ULVAC; adhesion; advanced seed layer; barrier characteristic; copper alloy material; copper wiring patterning; deposition process; electroplating; flat panel display; printed circuit board; seed layer controllability; seed layer etching; seed layer sputtering method; throwing power; via; Etching; Metals; Printed circuits; Sputtering; Surface morphology; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/ECTC.2015.7159618
Filename :
7159618
Link To Document :
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