Title :
Effect of intermittent spray on optoelectronic properties of ZnO nanocrystallites synthesized by chemical spray pyrolysis
Author :
Mahajan, C.M. ; Takwale, M.G.
Author_Institution :
Vishwakarma Inst. of Technol., Pune
Abstract :
Nanocrystalline ZnO films were synthesized by a chemical spray pyrolysis of zinc acetate solution. The deposition temperature (450degC) was kept constant by obstructing the spray after regular intervals. The XRD patterns of ZnO films were preferably oriented along c-axis (0 0 2) plane with the hexagonal wurtzite structure. The dependence of texture coefficient (TC) and standard deviation (sigmag) on spray obstruction time was also studied. The films synthesized were highly transparent (>94%) and conductive (dark conductivity 24.67 Omega-cm). The energy gap of the film was found to vary between 3.18 eV to 3.22 eV. The variation in sheet resistance (Omega/ ) and figure of merit (PhiTC) was also studied in view of their possible applications in optoelectronic devices.
Keywords :
II-VI semiconductors; crystal structure; dark conductivity; energy gap; nanostructured materials; pyrolysis; spray coatings; wide band gap semiconductors; zinc compounds; (0 0 2) plane; XRD; ZnO; chemical spray pyrolysis; dark conductivity; energy gap; figure of merit; hexagonal wurtzite structure; intermittent spray effect; nanocrystalline films; optoelectronic properties; sheet resistance; spray obstruction time; temperature 450 degC; texture coefficient; Chemical technology; Optical buffering; Optical films; Optical sensors; Optical surface waves; Spraying; Substrates; Surface morphology; Temperature; Zinc oxide; ZnO; intermittent spray pyrolysis; nanocrystallite; optoelectronic properties;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472671
