Title :
Free carrier absorption in free standing quantum well nanostructures
Author :
Bhat, J.S. ; Nesargi, R.A. ; Mulimani, B.G.
Author_Institution :
Karnatak Univ., Dharwad
Abstract :
A calculation of free carrier absorption in a free-standing quantum well (FSQW) nanostructure due to the electron interaction with confined acoustic modes described by elastic continuum model is presented. Numerical results are given for GaAs FSQW structure for the dependence of absorption coefficient on photon frequency electron temperature and thickness of the nanostructure. The oscillatory dependence of absorption coefficient on thickness of the FSQW nanostructure is attributed to the energy dispersion of confined acoustic modes which is in contrast with the calculations based on bulk description of acoustic phonons.
Keywords :
nanostructured materials; semiconductor quantum wells; absorption coefficient dependence; confined acoustic modes; elastic continuum; electron interaction; energy dispersion; free carrier absorption; free standing quantum well nanostructures; photon frequency electron temperature; Acoustic scattering; Carrier confinement; Electromagnetic wave absorption; Nanostructures; Optical scattering; Optical superlattices; Particle scattering; Phonons; Quantization; Quantum mechanics; Free carrier absorption; nanostructure;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472672
