Title :
Calculation of mobility using Monte Carlo method in a doped semiconducting single wall carbon nanotubes
Author :
Harode, Amit N. ; Pinge, Manish ; Joshi, Abhijeet ; Patrikar, R.M.
Author_Institution :
Visvesvaraya Nat. Inst. of Technol., Nagpur
Abstract :
The mobility of semiconducting single wall carbon nanotube in its intrinsic as well as doped state has been evaluated by Monte Carlo simulation approach. The role of electronic bandstructure, electron-phonon interaction, electron-impurity scattering and quantum transport are taken into account during simulation. The mobility for our model is studied at different temperature levels which implicitly suggest power law dependence of mobility. The simulation results are in agreement with available experimental data.
Keywords :
Monte Carlo methods; carbon nanotubes; doping profiles; electron mobility; electron-phonon interactions; surface scattering; Monte Carlo method; electron-impurity scattering; electron-phonon interaction; electronic bandstructure; mobility; quantum transport; single wall carbon nanotubes; Acoustic scattering; Analytical models; Carbon nanotubes; Charge carrier processes; Electron mobility; Particle scattering; Phonons; Semiconductivity; Semiconductor device doping; Semiconductor process modeling; Carbon nanotubes; Monte Carlo methods; electron-phonon interactions; semiconductor device doping;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472682
