Title :
Magneto-transport and optical properties of diluted magnetic semiconductor Ga1−xMnxSb
Author :
Ganesan, K. ; Bhat, H.L.
Author_Institution :
Indian Inst. of Sci., Bangalore
Abstract :
We have studied magneto-transport and optical properties of Ga1-xMnxSb crystals (x = 0.01, 0.02, 0.03 and 0.04) grown by horizontal Bridgman method. Negative magnetoresistance and anomalous Hall effect have been observed below 10 K. Temperature dependence of magnetization measurement shows a magnetic ordering below 10 K which could arise from Ga1-xMnxSb alloy formation. Also, saturation in magnetization observed even at room temperature suggests the existence of MnSb clusters. Reduction in band gap is observed with increasing Mn concentration in the crystals. Temperature dependence of band gap follows Bose-Einstein´s model.
Keywords :
Hall effect; energy gap; ferromagnetic materials; gallium compounds; magnetic semiconductors; magnetisation; magnetoresistance; manganese compounds; Bose-Einstein´s model; GaMnSb; anomalous Hall effect; band gap reduction; crystals optical properties; diluted magnetic semiconductor; ferromagnetic MnSb clusters; horizontal Bridgman method; magnetization measurement; magnetization saturation; magneto-transport properties; manganese concentration; negative magnetoresistance; temperature 293 K to 298 K; Crystals; Hall effect; Magnetic properties; Magnetic semiconductors; Magnetoresistance; Manganese alloys; Optical saturation; Photonic band gap; Saturation magnetization; Temperature dependence; Hall effect; Magnetic semiconductors; Magnetization; Magnetoresistance;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472683
