Title :
Extremely thin SOI (ETSOI) technology: Past, present, and future
Author :
Cheng, K. ; Khakifirooz, A. ; Kulkarni, P. ; Ponoth, S. ; Kuss, J. ; Edge, L.F. ; Kimball, A. ; Kanakasabapathy, S. ; Schmitz, S. ; Reznicek, A. ; Adam, T. ; He, H. ; Mehta, S. ; Upham, A. ; Seo, S.-C. ; Herman, J.L. ; Johnson, R. ; Zhu, Y. ; Jamison, P.
Author_Institution :
IBM Res. at Albany Nanotech, Albany, NY, USA
Abstract :
As the mainstream bulk devices face formidable challenges to scale beyond 20nm node, there is an increasingly renewed interest in fully depleted devices for continued CMOS scaling. In this paper, we provide an overview of extremely thin SOI (ETSOI), a viable fully depleted device architecture for future technology. Barriers that prevented ETSOI becoming a mainstream technology in the past are specified and solutions to overcome those barriers are provided.
Keywords :
CMOS integrated circuits; silicon-on-insulator; complementary metal-oxide-semiconductor integrated circuits; continued CMOS scaling; extremely thin SOI technology; mainstream technology; silicon-on-insulator; CMOS integrated circuits; Logic gates; Manufacturing; Performance evaluation; Silicon; Substrates; System-on-a-chip;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641473
