Evaluation of the impact of mechanical stress on CMOS device mismatch

Author

Schaper, Ulrich ; Linnenbank, Carsten ; Kollmer, Ute ; Mulatz, Hans ; Mensing, Tobias ; Schmidt, Roland ; Tilgner, Rainer ; Thewe, Roland

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2001

fDate

2001

Firstpage

1

Lastpage

5

Abstract

Mechanical stress occurs during packaging and front-end processing. The impact of mechanical stress on device mismatch is investigated. A measurement set-up is presented which uses a beam bending technique to apply mechanical stress. The characterization of mismatch is based on a test macro for the extraction of pair mismatch and long distance mismatch. It is found that the device characteristics change when stress is applied dependent on the device orientation with respect to the stress direction. 0.18 μm, 0.25 μm, and 0.50 μm technologies are investigated. No major impact is observed on the pair-mismatch of directly neighboring devices and on the long distance mismatch due to mechanical stress

Keywords

CMOS integrated circuits; bending; integrated circuit packaging; integrated circuit testing; internal stresses; stress analysis; 0.1 micron; 0.25 micron; 0.5 micron; CMOS device mismatch; beam bending technique; device characteristics change; device mismatch; device orientation; directly neighboring devices; front-end processing; long distance mismatch; measurement set-up; mechanical stress; packaging; pair mismatch; pair-mismatch; stress application; stress direction; test macro; CMOS technology; Electric variables measurement; Electrical resistance measurement; Mechanical variables measurement; Packaging; Resistors; Silicon; Stress measurement; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928627

Filename

928627