Title :
Effect of substrate voltage and oxide thickness on NMOSFET matching characteristics for a 0.18 μm CMOS technology
Author :
Difrenza, R. ; Llinares, P. ; Granger, E. ; Brut, H. ; Ghibaudo, G.
Author_Institution :
ST Microelectron., Crolles, France
Abstract :
Matching characterization has been performed on 0.18 μm NMOS devices for different substrate voltage values Vb and for various oxide thicknesses Tox, in order to determine the origin of the difference between experimental results and matching theory. Both experimental results and simulations outline an obvious tendency of mismatch to increase with Tox and Vb. Moreover, the greater contribution of threshold voltage mismatch seems to originate from the statistical fluctuations of channel dopant number. Nevertheless, Poisson distribution of channel dopant number fluctuations does not explain the absolute amplitude of threshold voltage mismatch that could be either related to channel dopant clustering or to deviation from Poisson statistical law
Keywords :
CMOS integrated circuits; MOSFET; Poisson distribution; circuit simulation; dielectric thin films; doping profiles; fluctuations; semiconductor device models; semiconductor device testing; 0.18 micron; CMOS technology; NMOS devices; NMOSFET matching characteristics; Poisson distribution; Poisson statistical law; SiO2-Si; channel dopant clustering; channel dopant number; channel dopant number fluctuations; matching characterization; matching theory; mismatch tendency; oxide thickness; simulations; statistical fluctuations; substrate voltage; threshold voltage mismatch; CMOS technology; Diodes; Fluctuations; Linear predictive coding; MOS devices; MOSFET circuits; Microelectronics; Protection; Testing; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928628
