DocumentCode :
3175928
Title :
Fine pitch 3D-TSV based high frequency components for RF MEMS applications
Author :
Vitale, Wolfgang A. ; Fernandez-Bolanos, Montserrat ; Merkel, Reinhard ; Enayati, Amin ; Ocket, Ilja ; De Raedt, Walter ; Weber, Josef ; Ramm, Peter ; Ionescu, Adrian M.
Author_Institution :
NanoLAB, Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
585
Lastpage :
590
Abstract :
The development of interconnections suitable for radio-frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the technology to implement fine-pitch high-aspect ratio tungsten-filled through-silicon vias (W-TSVs) adapted for high-frequency applications. The presented technology is optimized for integration with RF MEMS, for which we propose a compatible fabrication process flow. We designed and characterized RF test structures to assess the quality of the W-TSVs and their suitability for radio-frequency integrated circuits (RFIC) applications, showing low insertion loss for TSV in coplanar waveguides (CPW) and high-performance wideband mm-wave antennas.
Keywords :
coplanar waveguides; fine-pitch technology; micromechanical devices; millimetre wave antennas; radiofrequency integrated circuits; three-dimensional integrated circuits; tungsten; CPW; RF MEMS; RFIC; coplanar waveguides; fine pitch 3D-TSV; high frequency components; high-quality substrate-integrated devices; interconnections; millimeter-wave applications; radio-frequency applications; radio-frequency integrated circuits; through-silicon vias; wideband mm-wave antennas; Antenna measurements; Coplanar waveguides; Metals; Micromechanical devices; Radio frequency; Substrates; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/ECTC.2015.7159650
Filename :
7159650
Link To Document :
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