A new Leff extraction approach for devices with pocket implants

In this paper, we propose a new approach to extract the effective channel length of MOSFETs by a C-V method. Gate-to-substrate capacitance is measured and the effective channel length can be extracted from two devices with different gate lengths. It has been verified by both simulation and experimental data. The extracted L_eff value is very close to the real metallurgical channel length, even for devices scaled down to the 0.1 μm regime. In addition, compared to the shift-and-ratio (S&R) method, which fails to extract an accurate L _eff of devices with pocket implants, we prove that our approach still works well for the devices with pocket implants even down to 0.1 μm regime