A new method for measuring the coupling coefficient of a split-gate flash EEPROM without an additional test structure

Author

Fujiwara, H. ; Arimoto, M. ; Kaida, T. ; Sudo, S. ; Kurooka, K. ; Nagasawa, H. ; Hiroshima, T. ; Mameno, K.

Author_Institution

Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Gifu, Japan

fYear

2001

fDate

2001

Firstpage

43

Lastpage

46

Abstract

A new method for measuring the actual coupling coefficient of a split-gate flash EEPROM whose floating gate voltage is controlled by the source voltage is presented, which uses no additional test structure or nonfloating gate TEG. In this method, the subthreshold current is measured twice as the source voltage is increased after the control gate transistor has turned on sufficiently. After the drain voltage is slightly altered (ΔV), the subthreshold curve is a·ΔV shifted from the previous one. The coefficient a obtained by this method agrees with the value obtained by the well known subthreshold slope method using a test structure

Keywords

electric current; flash memories; integrated circuit measurement; integrated memory circuits; control gate transistor; coupling coefficient measurement; drain voltage; floating gate voltage; nonfloating gate TEG; source voltage; split-gate flash EEPROM; subthreshold current; subthreshold curve shift; subthreshold slope method; test structure; Capacitance; Current measurement; EPROM; Electric variables measurement; Microelectronics; Split gate flash memory cells; Subthreshold current; Testing; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928635

Filename

928635