• DocumentCode
    3176102
  • Title

    Reduction of thermal expansion coefficient of electrodeposited copper

  • Author

    Kondo, Kazuo ; Mukahara, Shingo ; Onuki, Jin ; Hayashi, Taro ; Yokoi, Masayuki

  • Author_Institution
    Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    652
  • Lastpage
    655
  • Abstract
    1. With the additive A, this copper shrinks with raising the temperature for the first time anneal. Most materials expands with raising the temperature, and this copper shrinks. For the second time anneal, this copper shows about half of the TEC of conventional copper at 400°C. 2. TSV of 4μm in width and 25μm depth has no voids or seams and a perfect filling has been achieved. 3. Addition of the additive A miniaturize the grain size after annealing at 400°C. The impurities from the additive A is considered to segregate at the grain boundaries and inhibit the grain growth at the annealing. 4. In-situ SEM observation of pumping with annealing will be presented at the meeting.
  • Keywords
    additives; annealing; copper; electrodeposition; grain boundaries; grain growth; grain size; impurities; scanning electron microscopy; thermal expansion; three-dimensional integrated circuits; SEM; TEC; TSV; additive; annealing; electrodeposited copper; grain boundary; grain growth; grain size; impurity; temperature 400 C; thermal expansion coefficient reduction; through silicon vias; void; Additives; Annealing; Copper; Grain size; Heating; Thermal expansion; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159660
  • Filename
    7159660