• DocumentCode
    3176138
  • Title

    Effect of Cu grain boundary sliding on TSV extrusion

  • Author

    Chenglin Wu ; Tengfei Jiang ; Im, Jay ; Rui Huang ; Ho, Paul S.

  • Author_Institution
    Dept. of Aerosp. Eng. & Eng. Mech., Univ. of Texas, Austin, TX, USA
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    661
  • Lastpage
    665
  • Abstract
    This study investigates the effect of grain boundary sliding (GBS) and material properties on the extrusion of through-silicon via. A finite element model is set up to evaluate via extrusion during thermal cycling taking into account the actual grain structures near the via top. The elastic anisotropy and plasticity are considered for each Cu grain, and the grain orientation obtained from experimental measurements is directly mapped into the FEA model. GBS is described by a cohesive zone model based on a frictional traction separation relationship. Based on GBS, the via extrusion behavior is deduced for two different Cu/Si interfacial conditions: fully bonded and free sliding, corresponding to the upper and lower bounds of the extrusion. In each case, the effect of GBS is evaluated by analyzing the plasticity and extrusion profiles. The results indicate that GBS plays a dominant role in determining the magnitude and profile of via extrusion.
  • Keywords
    copper; extrusion; finite element analysis; plasticity; slip; three-dimensional integrated circuits; Cu; FEA model; GBS; TSV extrusion; cohesive zone model; copper grain boundary sliding; copper interface; elastic anisotropy; finite element model; frictional traction separation relationship; grain orientation; material property; plasticity; silicon interface; thermal cycling; through-silicon via; Anisotropic magnetoresistance; Grain boundaries; Microstructure; Plastics; Silicon; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159662
  • Filename
    7159662