Title :
Effective-channel-length extraction for double-diffused MOSFETs
Author :
Ichikawa, Sanae ; Eshima, Yuu ; Terada, Kazuo ; Matsuki, Takeo
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Japan
Abstract :
We propose a new method to extract the effective channel length for a double-diffused MOSFET (DMOSFET). This method models the DMOSFET by using two MOSFETs serially connected to each other. The effective channel lengths for these two MOSFETs are extracted from the single relation between the effective channel length and the gate voltage. The effective channel lengths extracted by this method agree with the distance between the source and the drain fairly well
Keywords :
MOSFET; semiconductor device measurement; semiconductor device models; DMOSFET; DMOSFET model; double-diffused MOSFETs; effective channel length; effective-channel-length extraction; gate voltage; serially connected MOSFET pair; source-drain distance; Boron; Circuit synthesis; Data mining; Impurities; MOSFETs; National electric code; Process design; SPICE; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928644
