Title :
Extraction of the induced gate noise, channel thermal noise and their correlation in sub-micron MOSFETs from RF noise measurements
Author :
Chen, Chih-Hung ; Deen, M. Jamal ; Matloubian, Mishel ; Cheng, Yuhua
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
An extraction method to obtain the induced gate noise (ig ig*), channel thermal noise (idi d*) and their cross-correlation (igi d*) in submicron MOSFETs directly from scattering and RF noise parameter measurements is presented and experimentally verified. In addition, the extracted induced gate noise, channel thermal noise and their correlation versus frequency, bias condition and channel length are presented
Keywords :
MOSFET; correlation methods; electric noise measurement; electromagnetic wave scattering; microwave field effect transistors; semiconductor device measurement; semiconductor device noise; thermal noise; MOSFETs; RF noise measurements; RF noise parameter measurements; bias condition; channel length; channel thermal noise; correlation; cross-correlation; extracted induced gate noise; extraction method; induced gate noise; scattering parameter measurements; Acoustic reflection; CMOS process; Circuit noise; Data mining; Electric variables measurement; MOSFETs; Noise measurement; Radio frequency; Scattering parameters; Thermal engineering;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928651
