DocumentCode :
3176505
Title :
Electromigration failure of aluminum contact junctions
Author :
Aronstein, J.
Author_Institution :
Poughkeepsie, NY, USA
fYear :
1995
fDate :
2-4 Oct. 1995
Firstpage :
10
Lastpage :
16
Abstract :
Current flow in a typical aluminum contact interface occurs only where metallic junctions form at cracks in the insulating aluminum oxide. When the total metallic conducting area is small, current density may be high enough to initiate electromigration failure. These experiments use a solid aluminum specimen having a constricted current path, representing a single metallic contact junction. Tests are conducted at two current levels, with alternating or direct current flow. There is no significant change of potential drop during an initial stable period, after which the specimens fail abruptly as the failure occurs in both AC and DC specimens.
Keywords :
aluminium; electrical contacts; electromigration; failure analysis; Al; constricted current path; contact interface; contact junctions; current density; current levels; direct current flow; electromigration failure; potential drop; total metallic conducting area; Aluminum oxide; Atomic measurements; Contact resistance; Current density; Electromigration; Insulation; Protection; Solids; Testing; Thin film circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Contacts, 1995., Proceedings of the Forty-First IEEE Holm Conference on
Conference_Location :
Montreal, Quebec, Canada
Print_ISBN :
0-7803-2728-4
Type :
conf
DOI :
10.1109/HOLM.1995.482856
Filename :
482856
Link To Document :
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