Title :
Impact of transistor noise on high precision parametric matching measurements
Author :
Tuinhout, Hans P. ; Klootwijk, Johan H. ; Goeke, Wayne C. ; Stauffer, Lee K.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Utilising the correlation of fluctuations of the drain and source currents of a MOSFET, this paper demonstrates that low frequency transistor noise (and random telegraph signals) can be much higher than the noise contribution of bench top DC semiconductor measurement systems. These results provide valuable insights into the limits of high precision parameter fluctuation (matching) measurement methods
Keywords :
CMOS integrated circuits; MOSFET; current fluctuations; integrated circuit measurement; integrated circuit reliability; measurement systems; semiconductor device noise; CMOS IC; MOSFET; bench top DC semiconductor measurement systems; correlation; drain current fluctuations; low frequency transistor noise; matching measurement methods; noise contribution; parameter fluctuation measurement methods; precision parametric matching measurements; random telegraph signals; source current fluctuations; transistor noise; Current measurement; Fluctuations; Low-frequency noise; MOSFETs; Noise measurement; Probes; Semiconductor device noise; Telegraphy; Time measurement; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928662
