Impact of transistor noise on high precision parametric matching measurements

Author

Tuinhout, Hans P. ; Klootwijk, Johan H. ; Goeke, Wayne C. ; Stauffer, Lee K.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2001

fDate

2001

Firstpage

201

Lastpage

206

Abstract

Utilising the correlation of fluctuations of the drain and source currents of a MOSFET, this paper demonstrates that low frequency transistor noise (and random telegraph signals) can be much higher than the noise contribution of bench top DC semiconductor measurement systems. These results provide valuable insights into the limits of high precision parameter fluctuation (matching) measurement methods

Keywords

CMOS integrated circuits; MOSFET; current fluctuations; integrated circuit measurement; integrated circuit reliability; measurement systems; semiconductor device noise; CMOS IC; MOSFET; bench top DC semiconductor measurement systems; correlation; drain current fluctuations; low frequency transistor noise; matching measurement methods; noise contribution; parameter fluctuation measurement methods; precision parametric matching measurements; random telegraph signals; source current fluctuations; transistor noise; Current measurement; Fluctuations; Low-frequency noise; MOSFETs; Noise measurement; Probes; Semiconductor device noise; Telegraphy; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928662

Filename

928662