DocumentCode :
3176563
Title :
Mismatch and flicker noise characterization of tantalum nitride thin film resistors for wireless applications
Author :
Thibieroz, Helene ; Shaner, Pat ; Butler, Zeynep Celik
Author_Institution :
Digital DNA Labs. RF/IF, Motorola Inc., Austin, TX, USA
fYear :
2001
fDate :
2001
Firstpage :
207
Lastpage :
212
Abstract :
A new tantalum nitride thin film resistor (TFR) technology for application in analog and mixed signal Si-IC technologies has been characterized for mismatch and noise behavior. Due to excellent matching properties, an optimal matching methodology and algorithms had to be developed to evaluate mismatch accurately. This analysis is performed for different layout configurations and temperatures. Based on these mismatch variations, an optimum layout set has been generated for design applications. Using this set, different models have been implemented and evaluated. In contrast to the TFR, other resistors such as polysilicon are found to exhibit a much higher mismatch and flicker noise. Correlation between thin film resistor mismatch and its crystal structure is therefore being investigated. Flicker noise measured on the TFR resistor confirms this hypothesis by showing a very low level of noise similar to metal resistors
Keywords :
crystal structure; electron device noise; electron device testing; flicker noise; integrated circuit packaging; tantalum compounds; thin film resistors; Si; TFR; TaN; analog Si-IC technologies; crystal structure; design applications; flicker noise characterization; matching properties; metal resistors; mismatch characterization; mismatch variations; mixed signal Si-IC technologies; models; optimal matching algorithms; optimal matching methodology; optimum layout set; resistors; tantalum nitride thin film resistor technology; tantalum nitride thin film resistors; thin film resistor mismatch; wireless applications; 1f noise; MIM capacitors; Noise level; Noise measurement; Performance analysis; Plasma measurements; Plasma temperature; Resistors; Semiconductor device noise; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
Type :
conf
DOI :
10.1109/ICMTS.2001.928663
Filename :
928663
Link To Document :
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