A simple characterization method for MOS transistor matching in deep submicron technologies

Author

Croon, Jeroen A. ; Rosmeulen, M. ; Decoutere, S. ; Sansen, Willy ; Maes, H.E.

Author_Institution

IMEC, Leuven, Belgium

fYear

2001

fDate

2001

Firstpage

213

Lastpage

218

Abstract

A new and simple four parameter mismatch model is presented for the MOS transistor. This model is extensively tested on a 0.18 μm CMOS technology. Bulk bias dependence is modeled physically and no extra parameter is needed for long channel transistors. The repeatability of the measurement system and parameter extraction has been investigated. It is shown that for the measurement set-up and test structures, measurements in the linear region are affected by contact resistance variation for devices broader than 4 μm

Keywords

CMOS integrated circuits; MOSFET; contact resistance; semiconductor device measurement; semiconductor device models; 0.18 micron; 4 micron; CMOS technology; MOS transistor; MOS transistor matching; bulk bias dependence; channel length; characterization method; contact resistance variation; device width; four parameter mismatch model; linear region measurements; measurement repeatability; measurement set-up; measurement system; model testing; parameter extraction; test structures; CMOS technology; Contact resistance; Electrical resistance measurement; Electronic mail; Equations; MOSFETs; Parameter extraction; Semiconductor device modeling; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928664

Filename

928664