DocumentCode :
3176605
Title :
A power gating GALS interface implementation
Author :
Rajakumari, A. ; Sharma, N. S. Murthy ; Kishore, K. Lal ; Petta, Vasantha Kumar
Author_Institution :
B.V.R.I.T., Hyderabad, India
fYear :
2013
fDate :
19-21 Dec. 2013
Firstpage :
34
Lastpage :
39
Abstract :
In today´s nanometric VLSI designs achieving both power and performance targets is the top most priority for design closure. Globally asynchronous locally synchronous (GALS) architectures can offer less dynamic power and improved performance due to absence of global clock. In GALS SoC architectures each synchronous blocks runs on their local clocks. Synchronous blocks communicate with each other by pausing their local clocks using an asynchronous interface which is implemented using various handshake protocols. However any synchronous block which has to wait long time for data from another block need to be in idle state and as a result will dissipate significant leakage power in nanometric designs. Power gating is an effective technique to reduce leakage power of an idle circuit in synchronous designs. However implementing such power gating interface in GALS architecture is a challenge in the absence of clock. Thus to reduce the leakage power in ideal blocks which are waiting for the data, a new GALS wrapper interface was proposed which can generate power gating sequence. To corroborate the proposed interface a GALS 8051 was implemented using Synopsys SAED 90 nm libraries. The power gating sequence of 8051 asynchronous wrappers are used to gate the power of Random Access Memory (RAM) block while Arithmetic Logic Unit (ALU) block is busy in doing arithmetic operations. The experimental results show a 30% reduction in leakage power of RAM block due to power gating.
Keywords :
VLSI; clocks; random-access storage; system-on-chip; ALU; GALS 8051; RAM; SoC; Synopsys SAED; VLSI designs; arithmetic logic unit; asynchronous interface; clock; globally asynchronous locally synchronous architectures; leakage power; nanometric designs; power gating GALS interface; power gating sequence; random access memory; size 90 nm; synchronous designs; system-on-chip; Asia; Clocks; Microelectronics; Switches; Synchronization; System-on-chip; 4-Phase handshking; Asynchronous Wrappers; Clock Gating; Globally asynchronous locally synchronous (GALS); Petri Nets; Power Gating; Relative Timing; SignaI Transition Graph (STG);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2013 IEEE Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Visakhapatnam
Print_ISBN :
978-1-4799-2750-0
Type :
conf
DOI :
10.1109/PrimeAsia.2013.6731174
Filename :
6731174
Link To Document :
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