A new test structure to measure precise location of hot-carrier-induced photoemission peak from gate center of subquarter-micron n-MOSFETs

Author

Funada, Mari ; Matsuda, Toshihiro ; Ohzone, Takashi ; Odanaka, Shinji ; Yamashita, Kyoji ; Koike, Norio ; Tatsumma, K.

Author_Institution

Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan

fYear

2001

fDate

2001

Firstpage

223

Lastpage

228

Abstract

A new test structure, which has a 0.5 μm line-and-space polysilicon pattern with the center aligned on the MOSFET´s gate center, is proposed for hot carrier analysis of sub-quarter micron devices. Hot-carrier-induced photoemission effects were measured using a photoemission microscope with a liquid N₂ cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of the MOSFET gate with a spatial resolution sufficiently less than ±24 nm at microscope magnification of 1000×

Keywords

CCD image sensors; CMOS integrated circuits; MOSFET; hot carriers; image resolution; photoemission; position measurement; semiconductor device measurement; 0.5 micron; MOSFET gate; MOSFET gate center; N₂; center alignment; gate center; hot carrier analysis; hot-carrier-induced photoemission effects; hot-carrier-induced photoemission peak location; line-and-space polysilicon pattern; liquid N₂ cooled CCD imager; microscope magnification; n-MOSFETs; peak photoemission intensity position; photoemission microscope; spatial resolution; test structure; Charge coupled devices; Hot carrier effects; Hot carriers; MOSFET circuits; Microscopy; Pattern analysis; Photoelectricity; Position measurement; Spatial resolution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928666

Filename

928666