Channel width and length dependent flicker noise characterization for n-MOSFETs

Author

Aoki, Hitoshi ; Shimasue, Masanori

Author_Institution

Design Technol. Group, Agilent Technol. Japan Ltd., Tokyo, Japan

fYear

2001

fDate

2001

Firstpage

257

Lastpage

261

Abstract

Gate channel width and length dependent flicker noise analysis and modeling for sub-micron n-channel MOSFETs have been presented. It was found that the flicker noise in the saturation region increased with channel width, contrary to existing theory. Drain current noise density measurements were performed with two different CMOS processes for analysis using our automated 1/f noise measurement system. Since model parameters in the model are all geometry dependent, only one size of device is needed for the extractions

Keywords

1/f noise; CMOS integrated circuits; MOSFET; flicker noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; CMOS processes; automated 1/f noise measurement system; channel length dependent flicker noise characterization; channel width; channel width dependent flicker noise characterization; device size; drain current noise density; flicker noise; flicker noise analysis; gate channel length; gate channel width; geometry dependent model parameters; model parameters; modeling; n-MOSFETs; n-channel MOSFETs; saturation region; 1f noise; CMOS process; Density measurement; Geometry; MOSFETs; Noise measurement; Performance analysis; Performance evaluation; Semiconductor device modeling; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928672

Filename

928672