Title :
New length scaling of current gain factor and characterization method for pocket implanted MOSFET´s
Author :
Minondo, M. ; Gouget, G. ; Juge, A.
Author_Institution :
Central R&D, STMicrolectronics, Crolles, France
Abstract :
A new analytical model is proposed for the gain factor channel length dependence β(L) observed in advanced MOSFET device architectures with pocket implants. The idea consists of splitting the channel length domain into two regions of different mobility values. This approach has been implemented in the BSIM3V3.2 model for the description of 0.18 μm MOSFETs. Very good modeling in a large channel length range for N- and P-MOSFETs is demonstrated
Keywords :
MOSFET; carrier mobility; doping profiles; ion implantation; semiconductor device models; 0.18 micron; BSIM3V3.2 model; MOSFET device architectures; MOSFETs; N-MOSFET; P-MOSFET; analytical model; channel length domain; channel length range; characterization method; current gain factor; gain factor channel length dependence; length scaling; mobility values; pocket implanted MOSFET; pocket implants; Analytical models; Capacitance; Doping profiles; Implants; MOS devices; MOSFET circuits; Performance gain; Research and development; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928673
