Impact of channel length & oxide thickness variation in an asymmetric SGOI-TFET

Author

Chander, Sweta ; Baishya, S.

Author_Institution

ECE Dept., NIT Silchar, Silchar, India

fYear

2013

fDate

19-21 Dec. 2013

Firstpage

103

Lastpage

106

Abstract

In this paper we have optimized a asymmetric SGOI based TFET for low power applications with V_DD = 0.5 V. Here, we have observed the variation of channel length and oxide thickness on the device which affects switching figure of merit such as subthreshold swing, I_on and I_off. Effect of gate dielectric on the subthreshold performance of the SGOI-TFET is also observed using the Non-Local BTBT model and it is found that the ON current is enhanced with increase in relative permittivity of the gate dielectrics. Synopsys TCAD is used for various optimization of the device which shows the result with the record high I_on/I_off ratio of 3.4×10⁹ and the steepest average subthreshold swing of 36 mV/ decade.

Keywords

dielectric materials; field effect transistors; permittivity; technology CAD (electronics); tunnel transistors; ON current; Synopsys TCAD; asymmetric SGOI-TFET; channel length; gate dielectric; low power applications; nonlocal BTBT model; oxide thickness variation; relative permittivity; silicon-germanium on insulator; subthreshold performance; switching figure of merit; tunnel field effect transistor; voltage 0.5 V; Dielectrics; Field effect transistors; Logic gates; Silicon; Tunneling; High-K-Dielectrics; Quantum Tunneling; Silicon Germanium on Insulator; Subthreshold Swing (SS); Tunnel FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electronics (PrimeAsia), 2013 IEEE Asia Pacific Conference on Postgraduate Research in

Conference_Location

Visakhapatnam

Print_ISBN

978-1-4799-2750-0

Type

conf

DOI

10.1109/PrimeAsia.2013.6731186

Filename

6731186