Title :
Surface reaction doping using gas source for ultra shallow junctions
Author :
Kiyota, Yukihiro
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Surface reaction doping with "zero-energy" dopants is one solution for overcoming the limitations of ion implantation, which necessarily uses energetic ions. We study rapid vapor-phase doping (RVD) to show its potential for fabricating future transistors. The problems and future research directions for surface reaction doping are also discussed.
Keywords :
MOSFET; doping profiles; integrated circuit technology; semiconductor doping; surface chemistry; energetic ions; gas source; ion implantation limitations; rapid vapor-phase doping; surface reaction doping; transistor fabrication; ultra shallow junctions; zero-energy dopants; Boron; Hydrogen; Impurities; Ion implantation; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Semiconductor device doping; Silicon; Surface resistance;
Conference_Titel :
Junction Technology, 2000, The first international workshop on, Extended abstracts of
Conference_Location :
Makuhari, Japan
Print_ISBN :
4-89114-008-9
DOI :
10.1109/IWIT.2000.928771
